isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain: hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous -1 A Collector Power Dissipation @ TC=25℃ 10 B W PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1357 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A -1.0 V VBE(on) Base-Emitter On Voltage IC=-4A ; VCE= -2V -1.5 V ICBO Collector Cutoff Current VCB= -35V; IE= 0 -0.1 μA IEBO Emitter Cutoff Current VEB= -8V; IC= 0 -0.1 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100 hFE-2 DC Current Gain IC= -4A ; VCE= -2V 70 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -2V 170 MHz Output Capacitance IE= 0 ; VCB= -10V,ftest= 1MHz 62 pF fT COB CONDITIONS Y 100-200 160-320 isc Website：www.iscsemi.cn TYP. 2 MAX -20 UNIT V B hFE-1 Classifications O MIN 320