Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-3PML) and symbol 体 半导 Absolute maximum ratings(Tc=25℃) 固电 SYMBOL PARAMETER R O T UC VALUE UNIT -80 V -80 V -6 V Collector current -6 A IB Base current -3 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC CONDITIONS INCH OND IC M E ES ANG Emitter-base voltage Open emitter Open base Open collector TC=25℃ 1 Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A;IB=-0.2 A -0.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-2A ; VCE=-4V fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 150 pF -80 UNIT V 50 180 Switching times ton ts 0.18 固 tf 导体 半 电 Turn-on time Storage time Fall time C U D ON IC=-3A;RL=10Ω IB1=-IB2=-0.3A;VCC=-30V IC M E ES G N A CH IN hFE classifications O 50-100 P 70-140 TOR Y 90-180 2 1.10 0.21 μs μs μs Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1907 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4