Inchange Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC4007 ·Low collector saturation voltage APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VBE sat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 80 pF fT Transition frequency IC=-0.5A ; VCE=-12V 12 MHz CONDITIONS B hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 Inchange Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3