Inchange Semiconductor Product Specification 2SA969 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Complement to type 2SC2239 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS VALUE UNIT Open emitter -160 V Open base -160 V -5 V Open collector IC Collector current -1.5 A IE Emitter current 1.5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA969 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-160V ;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-100mA ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency IC=-100mA ; VCE=10V 100 MHz VCEsat CONDITIONS Y 70-140 120-240 TYP. B hFE Classifications O MIN 2 70 MAX UNIT 240 Inchange Semiconductor Product Specification 2SA969 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3