Inchange Semiconductor Product Specification 2SB705/705A/705B Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SD745/745A/745B APPLICATIONS ・Audio frequency power amplifier ・Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol 导体 半 电 Absolute maximum ratings (Ta=25℃) SYMBOL 固 VCBO VCEO PARAMETER CONDITIONS 2SB705 INCH Collector-emitter voltage 2SB705A 2SB705B Open emitter 2SB705 2SB705A Open base 2SB705B VEBO Emitter-base voltage C U D ON EMIC S E G AN Collector-base voltage TOR VALUE UNIT -140 -150 V -160 -140 -150 V -160 Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A PT Total power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB705/705A/705B Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB705 V(BR)CEO Collector-emitter breakdown voltage 2SB705A MIN TYP. MAX UNIT -140 IC=-25mA; IB=0 V -150 -160 2SB705B VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain hFE-2 导体 半 电 固 DC current gain fT Transition frequency COB Output capacitance IC=-50mA ; VCE=-5V IC=-0.2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz hFE-2 classifications S R Q 40-80 60-120 100-200 R O T UC D N O IC IC=-2A ; VCE=-5V M E S GE N A H INC 20 2 40 200 17 MHz 430 pF Inchange Semiconductor Product Specification 2SB705/705A/705B Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3