Inchange Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Large collector power dissipation ・High transition frequency APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER EM S E G N A H Collector-base voltage INC D N O IC CONDITIONS Collector- emitter voltage Emitter-base voltage IC Collector current ICM Collector current-peak PC Collector power dissipation Open collector Ta=25℃ R O T UC VALUE UNIT 45 V 35 V 5 V 1 A 1.5 A 1.2 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICEO Collector cut-off current VCE=20V; IB=0 100 μA ICBO Collector cut-off current VCB=20V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=500mA ; VCE=10V hFE-2 COB 固电 fT 体 导 半 CONDITIONS DC current gain Output capacitance IN R S 85-170 120-240 170-340 50 IC=50mA ; VCE=10V 2 MAX UNIT R O T UC 85 340 IE=0; VCB=10V;f=1MHz hFE-1 Classifications Q TYP. OND C I M E SE G N A CH Transition frequency IC=1A ; VCE=5V MIN 20 200 pF MHz Inchange Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC