Inchange Semiconductor Product Specification 2SC1567 2SC1567A Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications ·Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC1567 VCBO Collector-base voltage 100 Open base 2SC1567A VEBO Emitter-base voltage V 120 2SC1567 Collector- emitter voltage UNIT 100 Open emitter 2SC1567A VCEO VALUE V 120 Open collector 5 V 0.5 A 1 A 1.2 W IC Collector current ICM Collector current-peak PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1567 2SC1567A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1567 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 100 IC=0.1mA ;IB=0 V 120 2SC1567A V(BR)EBO MIN Emitter-base breakdown voltage IE=1μA ;IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50m A 0.85 1.2 V hFE-1 DC current gain IC=150mA ; VCE=10V 65 hFE-2 DC current gain IC=0.5A ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=50mA ; VCE=10V,f=200MHz hFE-1 Classifications R S 130-220 185-330 2 5 V 330 11 pF 120 MHz Inchange Semiconductor Product Specification 2SC1567 2SC1567A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3