ISC 2SC3944A

Inchange Semiconductor
Product Specification
2SC3944 2SC3944A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SA1535/1535A
·High transition frequency
APPLICATIONS
·For low-frequency driver and high
power amplification
·Optimum for the driver-stage of a 60W
to 100W output amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC3944
VCBO
Collector-base voltage
150
Open base
2SC3944A
VEBO
Emitter-base voltage
V
180
2SC3944
Collector-emitter voltage
UNIT
150
Open emitter
2SC3944A
VCEO
VALUE
V
180
Open collector
5
V
IC
Collector current
1.0
A
ICM
Collector current-peak
1.5
A
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3944 2SC3944A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC3944
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
150
IC=1mA; IB=0
2SC3944A
V(BR)EBO
MIN
V
180
Emitter-base breakdown voltage
IE=10μA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.5 A;IB=50m A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=0.5 A;IB=50m A
2.0
V
10
μA
ICBO
‹
2SC3944
VCB=150V; IE=0
2SC3944A
VCB=180V; IE=0
5
V
Collector
cut-off current
hFE-1
DC current gain
IC=150mA ; VCE=10V
95
hFE-2
DC current gain
IC=500mA ; VCE=5V
50
fT
Transition frequency
IC=50mA ; VCB=10V
200
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
30
pF
hFE classifications
Q
R
95-155
130-220
2
220
Inchange Semiconductor
Product Specification
2SC3944 2SC3944A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3