Inchange Semiconductor Product Specification 2SC1618 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1618 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.4 A 2.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V fT CONDITIONS 2 MIN TYP. 20 MAX UNIT 180 10 MHz Inchange Semiconductor Product Specification 2SC1618 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3