Inchange Semiconductor Product Specification 2SC1929 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V 0.4 A 1 A 25 W IC Collector current ICM Collector current-Peak PC Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1929 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 2.0 V VBEsat Base-emitter on voltage IC=0.1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 35 hFE-2 DC current gain IC=0.3A ; VCE=5V 30 Transition frequency IC=0.1A ; VCE=5V fT CONDITIONS hFE-1 Classifications S R Q P 35-70 60-120 100-200 165-330 2 MIN TYP. MAX UNIT 330 80 MHz Inchange Semiconductor Product Specification 2SC1929 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3