ISC 2SC4849

Inchange Semiconductor
Product Specification
2SC4849
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High switching speed
·Wide safe operating area
APPLICATIONS
·For power supply
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current (DC)
7
A
ICM
Collector current-Peak
15
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4849
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
1.2
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=12V; IC=0
10
μA
hFE
DC current gain
IC=3A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=10V
20
MHz
Collector output capacitance
f=1MHz ; VCB=10V
150
pF
fT
Cob
CONDITIONS
MIN
TYP.
MAX
120
UNIT
V
100
200
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A, IB1=0.5A
IB2=-0.5A; VCC≈50V
RL=10Ω
2
0.5
μs
2.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC4849
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3