Inchange Semiconductor Product Specification 2SC4849 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed ·Wide safe operating area APPLICATIONS ·For power supply PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 12 V IC Collector current (DC) 7 A ICM Collector current-Peak 15 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4849 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.2 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=12V; IC=0 10 μA hFE DC current gain IC=3A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 150 pF fT Cob CONDITIONS MIN TYP. MAX 120 UNIT V 100 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A, IB1=0.5A IB2=-0.5A; VCC≈50V RL=10Ω 2 0.5 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC4849 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3