Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 7 V IC Collector current -DC 5 A ICM Collector current-Peak 7 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA IB=0 20 V V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 40 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3.0A; IB=0.1A(Pulse test) 1.0 V ICBO Collector cut-off current VCB=10V; IE=0 0.1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V(Pulse test) 140 hFE-2 DC current gain IC=1A ; VCE=2V(Pulse test) 70 fT Transition frequency IE=-50mA ; VCB=6V COB Output capacitance IE=0 ; VCB=20V,f=1MHz 2 MIN TYP. MAX UNIT 450 150 MHz 50 pF Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3