Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2.5 A ICM Collector current-peak 3 A PC Collector power dissipation Ta=25℃ 0.75 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=2.0A; IB=0.2A(Pulse test) 1.0 V VBE Base-emitter on voltage IC=1.5A ; VCE=2V(Pulse test) 1.5 V ICBO Collector cut-off current VCB=35V; IE=0 20 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 60 hFE-2 DC current gain IC=1.5A ; VCE=2V(Pulse test) 20 Transition frequency IC=0.2A ; VCE=2V(Pulse test) VCEsat fT CONDITIONS hFE-1 Classifications B C D 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 320 180 MHz Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors 4