isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2736 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2736 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA 0.7 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 30 Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 1400 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz CG Conversion Gain IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) 22.5 dB CG Conversion Gain IC= 2mA ; VCC= 12V;f= 900MHz fOSC= 930MHz(0dBm) fout= 30MHz 10 dB NF Noise Figure IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) 4.0 dB VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 300MHz 300 mV VOSC Oscillating output voltage IC= 7mA;VCC= 12V;fOSC= 930MHz 200 mV fT isc Website：www.iscsemi.cn 2 200 2200 MHz 1.0 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2736 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC2736 4