ISC 2SC5287

Inchange Semiconductor
Product Specification
2SC5287
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage,high speed switching
APPLICATIONS
・For switching regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
900
V
Collector-emitter voltage
Open base
550
V
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5287
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.8A; IB=0.36A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=1.8A; IB=0.36A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=1.8A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
Transition frequency
IE=-0.35A ; VCE=12V
6
MHz
fT
CONDITIONS
MIN
TYP.
MAX
550
UNIT
V
10
25
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Switching times
ton
ts
tf
Turn-on time
Storage time
IC=1.8A; RL=139Ω
IB1=0.27A; IB2=-0.9A
VCC=250V
Fall time
2
0.7
μs
4.0
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC5287
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC5287
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
4