Inchange Semiconductor Product Specification 2SC5287 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 900 V Collector-emitter voltage Open base 550 V Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5287 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1.8A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF Transition frequency IE=-0.35A ; VCE=12V 6 MHz fT CONDITIONS MIN TYP. MAX 550 UNIT V 10 25 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times ton ts tf Turn-on time Storage time IC=1.8A; RL=139Ω IB1=0.27A; IB2=-0.9A VCC=250V Fall time 2 0.7 μs 4.0 μs 0.5 μs Inchange Semiconductor Product Specification 2SC5287 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC5287 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4