isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 5.0A ·Low Saturation Voltage ·Complement to Type 2SB882 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A Collector Power Dissipation @ Ta=25℃ 1.75 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1192 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1192 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 5A ; VCE= 2V Current-Gain—Bandwidth Product IC= 5A ; VCE= 5V fT CONDITIONS MIN TYP. MAX UNIT 2000 20 MHz 0.6 μs 3.0 μs 1.8 μs Switching times ton Turn-on Time tstg Storage Time tf IC= 5A , IB1= -IB2= 10mA RL= 4Ω; VCC= 20V; PW = 50μs; Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn 2