ISC 2SD2023

Inchange Semiconductor
Product Specification
2SD2023
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SB1033
・Low collector saturation voltage
APPLICATIONS
・Low frequency power amplifiers
・Power drivers
・DC-DC converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3
A
IB
Base current
1
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2023
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA; IE=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
70
pF
Transition frequency
IC=0.5A ; VCE=5V
8
MHz
fT
‹
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SD2023
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3