Inchange Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB1033 ・Low collector saturation voltage APPLICATIONS ・Low frequency power amplifiers ・Power drivers ・DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A IB Base current 1 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=50μA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF Transition frequency IC=0.5A ; VCE=5V 8 MHz fT CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 Inchange Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3