Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain : hFE=2000 (Min) ・Low saturation voltage ・Complement to type 2SB1481 ・DARLINGTON APPLICATIONS ・With switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 5 V IC Collector current ±4 A ICM Collector current-peak ±6 A IB Base current 0.3 A PC Collector dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1.5A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 VECF CONDITIONS MIN TYP. MAX 100 V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Diode forward voltage UNIT IE=1A ; IB=0 2.0 V Switching times ton ts tf Turn-on time Storage time IB1=-IB2=6mA VCC≈30V ,RL=10Ω Duty cycle≤1% Fall time 2 0.2 μs 1.5 μs 0.6 μs Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4 Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 5