Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB755 ・High transition frequency ・High breakdown voltage :VCEO=150V(min) APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 150 V Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=5V; IC=0 -50 μA hFE DC current gain IC=1A ; VCE=5V VCEsat fT CONDITIONS 55-110 TYP. 55 MAX IC=1A ; VCE=10V O 80-160 2 UNIT 160 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Transition frequency hFE classifications R MIN 20 MHz Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3