ISC 2SD665

Inchange Semiconductor
Product Specification
2SD665
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SB645
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Power switching applications
・DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Fig.1 simplified outline (TO-3) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
200
V
Collector-emitter voltage
Open base
200
V
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
4
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD665
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
2.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
fT
‹
CONDITIONS
IC=1A ; VCE=5V
hFE Classifications
40-80
TYP.
MAX
200
R
70-140
2
UNIT
V
40
140
300
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Transition frequency
O
MIN
15
pF
MHz
Inchange Semiconductor
Product Specification
2SD665
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3