Inchange Semiconductor Product Specification 2SD665 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB645 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Collector Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 200 V Collector-emitter voltage Open base 200 V Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 4 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD665 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz fT CONDITIONS IC=1A ; VCE=5V hFE Classifications 40-80 TYP. MAX 200 R 70-140 2 UNIT V 40 140 300 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Transition frequency O MIN 15 pF MHz Inchange Semiconductor Product Specification 2SD665 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3