Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB554 ・High power dissipation ・High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS ・Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 180 V Collector-emitter voltage Open base 180 V Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 1.5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A ;IB=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=90V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA VCEsat hFE COB fT CONDITIONS MIN TYP. MAX R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=2A ; VCE=5V Output capacitance IE=0 ; VCB=10V;f=1.0MHz Transition frequency IC=2A ; VCE=5V hFE Classifications R O 40-80 70-140 2 40 UNIT 140 300 pF 5 MHz Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3