Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SB649/649A ・High breakdown voltage VCEO:120/160V ・High current 1.5A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD669 VCBO Collector-base voltage 120 Open base 2SD669A VEBO Emitter-base voltage IC V 180 2SD669 Collector-emitter voltage UNIT 180 Open emitter 2SD669A VCEO VALUE V 160 Open collector 5 V Collector current (DC) 1.5 A ICM Collector current-peak 3 A PD Total power dissipation Ta=25℃ 1 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER CONDITIONS 2SD669 Collector-emitter breakdown voltage MIN TYP. MAX 120 IC=10mA; RBE=∞ 2SD669A V 160 2SD669 Collector-base breakdown voltage UNIT 180 IC=1m A ;IE=0 V 180 2SD669A Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.0 V VBE Base-emitter on voltage IC=150mA ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 10 μA VCEsat 2SD669 hFE-1 fT COB 320 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH IC=150mA ; VCE=5V 60 200 DC current gain IC=0.5A ; VCE=5V Transition frequency IC=150mA ; VCE=5V 140 MHz Collector output capacitance f=1MHz ; VCB=10V 14 pF hFE Classifications B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 hFE-1 V 60 DC current gain 2SD669A hFE-2 5 2 30 Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4 Inchange Semiconductor Product Specification 2SD669 2SD669A Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 5