ISC 2SC1953

Inchange Semiconductor
Product Specification
2SC1953
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SA914
·High VCEO
APPLICATIONS
·For low-frequency power pre-amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
50
mA
ICM
Collector current-peak
100
mA
PC
Collector power dissipation
1.2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC1953
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1mA;IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
Collector-emitter saturation voltage
IC=30mA ;IB=3mA
1
V
ICBO
Collector cut-off current
VCB=100V; IE=0
1
μA
hFE
DC current gain
IC=10mA ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IE=-10mA ; VCB=10V
VCEsat
‹
CONDITIONS
hFE Classifications
R
S
130-220
185-330
2
MIN
130
TYP.
MAX
330
3
70
UNIT
pF
MHz
Inchange Semiconductor
Product Specification
2SC1953
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC1953
Silicon NPN Power Transistors
4