Inchange Semiconductor Product Specification 2SD745/745A/745B Silicon NPN Power Transistors · DESCRIPTION ·With MT-200 package ·Complement to type 2SB705/705A/705B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD745 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SD745A Open emitter Emitter-base voltage 150 2SD745B 160 2SD745 140 2SD745A UNIT 140 Open base 2SD745B VEBO VALUE 150 V V 160 Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A PT Total power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD745/745A/745B Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD745 V(BR)CEO Collector-emitter breakdown voltage 2SD745A MIN TYP. MAX UNIT 140 IC=25mA; IB=0 V 150 160 2SD745B VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5 A 1.5 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.5 A 2.0 V ICBO Collector cut-off current VCB=140V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE-2 DC current gain IC=2A ; VCE=5V 40 fT Transition frequency IC=0.2A ; VCE=5V 15 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 270 pF hFE-2 classifications S R Q 40-80 60-120 100-200 2 200 Inchange Semiconductor Product Specification 2SD745/745A/745B Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3