ISC 2SD745B

Inchange Semiconductor
Product Specification
2SD745/745A/745B
Silicon NPN Power Transistors
·
DESCRIPTION
·With MT-200 package
·Complement to type 2SB705/705A/705B
APPLICATIONS
·Audio frequency power amplifier
·Suitable for output stages of 60~120W audio
amplifiers and voltage regulators
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD745
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SD745A
Open emitter
Emitter-base voltage
150
2SD745B
160
2SD745
140
2SD745A
UNIT
140
Open base
2SD745B
VEBO
VALUE
150
V
V
160
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PT
Total power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD745/745A/745B
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD745
V(BR)CEO
Collector-emitter
breakdown voltage
2SD745A
MIN
TYP.
MAX
UNIT
140
IC=25mA; IB=0
V
150
160
2SD745B
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=0.5 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=0.5 A
2.0
V
ICBO
Collector cut-off current
VCB=140V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
μA
hFE-1
DC current gain
IC=50mA ; VCE=5V
20
hFE-2
DC current gain
IC=2A ; VCE=5V
40
fT
Transition frequency
IC=0.2A ; VCE=5V
15
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
270
pF
‹
hFE-2 classifications
S
R
Q
40-80
60-120
100-200
2
200
Inchange Semiconductor
Product Specification
2SD745/745A/745B
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3