SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD245 VCBO VCEO Collector-base voltage Collector-emitter voltage BD245A BD245B Open emitter 70 90 BD245C 115 BD245 45 BD245A BD245B Emitter-base voltage UNIT 55 Open base BD245C VEBO VALUE 60 80 V V 100 Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD245 VCEO(BR) Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 BD245A 60 IC=30mA ;IB=0 V BD245B 80 BD245C 100 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2.5A 4.0 V VBE-1 Base-emitter on voltage IC=3A ; VCE=4V 1.6 V VBE-2 Base-emitter on voltage IC=10A ; VCE=4V 3.0 V ICEO Collector cut-off current 0.7 mA 1.0 mA BD245/245A VCE=30V; IB=0 BD245B/245C VCE=60V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=3A ; VCE=4V 20 hFE-3 DC current gain IC=10A ; VCE=4V 4 Switching times ton Turn-on time toff Turn-off time IC=1A; IB1=-IB2=0.1A RL=20@ 2 0.3 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BD245/A/B/C