ISC BU506D

Inchange Semiconductor
Product Specification
BU506D
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・High voltage
・Fast switching speed
・With integrated efficiency diode
APPLICATIONS
・Horizontal deflection circuits of colour
TV receivers.
・Line-operated switch-mode applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICM
Collector current (Pulse)
8
A
IB
Base current
3
A
IBM
Base current(peak)
5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65-150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BU506D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
700
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0; L=25mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=1.33A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=1.33A
1.3
V
hFE
DC current gain
IC=0.1A ; VCE=5V
ICES
Collector cut-off current
VCE=rated; VBE=0
TC=125℃
0.5
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
200
mA
VF
Diode forward voltage
IF=3A;
2.2
V
6
V
13
1.5
30
Switching times
ts
tf
Storage time
Fall time
ICM = 3 A; IB(end) = 1A
LB = 12μH
2
6.5
μs
0.7
μs
Inchange Semiconductor
Product Specification
BU506D
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3