Product Specification www.jmnic.com 2N5264 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・DC-DC convertor ・Solid state relay ・General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A IB Base current 2 A PT Total power dissipation 87 W Tj Junction temperature 165 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com 2N5264 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A 1.5 V VBEsat Base-emitter saturation voltage IC=7A; IB=1.4A 1.2 V ICBO Collector cut-off current VCB=300V; IE=0 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 30 Transition frequency IC=1A ; VCE=10V 50 fT JMnic 180 UNIT V 300 MHz Product Specification www.jmnic.com 2N5264 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic