JMNIC 2N6077

Product Specification
www.jmnic.com
2N6077 2N6078 2N6079
Silicon NPN Power Transistors
DESCRIPTION
・・With TO-66 package
・Low collector-emitter saturation voltage
・High breakdown voltage
APPLICATIONS
・For horizontal deflection output stages
of TV’s and CRT’s
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6077
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6078
Open emitter
250
2N6079
350
2N6077
300
2N6078
Emitter-base voltage
UNIT
275
Open base
2N6079
VEBO
VALUE
275
V
V
375
Open collector
6
V
7
A
45
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
4.28
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6077 2N6078 2N6079
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6077
VCEO(sus)
Collector-emitter
sustaining voltage
2N6078
MIN
TYP.
MAX
UNIT
275
IC=0.1A ;IB=0
V
250
350
2N6079
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.0
V
VBEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.2
V
ICEO
Collector cut-off current
VCE= Rated VCEO; IB=0
2.0
mA
ICEX
Collector cut-off current
VCE=Rated VCEO; VBE(off)=1.5V
TC=125℃
0.1
1.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE
DC current gain
IC=1.2A ; VCE=1V
Transition frequency
IC=0.5A;VCE=10V;f=1MHz
fT
JMnic
12
70
7
MHz
Product Specification
www.jmnic.com
2N6077 2N6078 2N6079
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
JMnic