JMNIC 2N5804

Product Specification
www.jmnic.com
2N5804 2N5805
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown
APPLICATIONS
・Switching regulator
・Inverters
・Solenoid and relay drivers
・Motor controls
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5804
VCBO
Collector-base voltage
225
Open base
2N5805
VEBO
V
375
2N5804
Collector-emitter voltage
Emitter-base voltage
UNIT
300
Open emitter
2N5805
VCEO
VALUE
V
300
Open collector
6
V
5
A
110
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N5804 2N5805
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5804
VCEO(sus)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
225
IC=0.1A ;IB=0
V
300
2N5805
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICEO
Collector cut-off current
VCE=RatedVCE; IB=0
10
mA
ICEV
Collector cut-off current
2N5804
12
VCE=RatedVCE; VBE(off)=1.5V
mA
2N5805
10
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
20
Trainsistion frequency
IC=1A ; VCE=10V
15
fT
JMnic
1.0
mA
100
MHz
Product Specification
www.jmnic.com
2N5804 2N5805
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic