Product Specification www.jmnic.com 2N5804 2N5805 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5804 VCBO Collector-base voltage 225 Open base 2N5805 VEBO V 375 2N5804 Collector-emitter voltage Emitter-base voltage UNIT 300 Open emitter 2N5805 VCEO VALUE V 300 Open collector 6 V 5 A 110 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5804 2N5805 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5804 VCEO(sus) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 225 IC=0.1A ;IB=0 V 300 2N5805 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICEO Collector cut-off current VCE=RatedVCE; IB=0 10 mA ICEV Collector cut-off current 2N5804 12 VCE=RatedVCE; VBE(off)=1.5V mA 2N5805 10 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=5A ; VCE=4V 20 Trainsistion frequency IC=1A ; VCE=10V 15 fT JMnic 1.0 mA 100 MHz Product Specification www.jmnic.com 2N5804 2N5805 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic