JMnic Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3944/3944A ・Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS ・For low-frequency driver and high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1535 VCBO Collector-base voltage -150 Open base 2SA1535A VEBO Emitter-base voltage V -180 2SA1535 Collector-emitter voltage UNIT -150 Open emitter 2SA1535A VCEO VALUE V -180 Open collector -5 V IC Collector current -1.0 A ICM Collector current-peak -1.5 A PC Collectorl power dissipation Ta=25℃ 2.0 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1535 V(BR)CEO CONDITIONS IC=-1mA; IB=0 MIN TYP. MAX UNIT -150 Collector-emitter breakdown voltage V IC=-0.1mA; IB=0 -180 Emitter-base breakdown voltage IE=-10μA; IC=0 -5 VCEsat Collector-emitter saturation voltage IC=-0.5 A;IB=-50m A -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5 A;IB=-50m A -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -10 μA hFE-1 DC current gain IC=-150mA ; VCE=-10V 90 hFE-2 DC current gain IC=-500mA ; VCE=-5V 50 fT Transition frequency IC=-50mA ; VCB=-10V 200 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 30 pF 2SA1535A V(BR)EBO hFE-1 classifications Q R S 90-155 130-220 185-330 2 V 330 JMnic Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors 4