JMnic Product Specification 2SA1859 2SA1859A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4883/4883A APPLICATIONS ・For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1859 VCBO Collector-base voltage -150 Open base 2SA1859A VEBO Emitter-base voltage V -180 2SA1859 Collector-emitter voltage UNIT -150 Open emitter 2SA1859A VCEO VALUE V -180 Open collector -6 V IC Collector current -2 A IB Base current -1 A PC Collector dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1859 2SA1859A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA1859 ICBO Collector-emitter saturation voltage Collector cut-off current TYP. MAX UNIT -150 IC=-10mA ; IB=0 V -180 2SA1859A VCEsat MIN IC=-0.7A;IB=-70mA -1.0 V 2SA1859 VCB=-150V;IE=0 -10 μA 2SA1859A VCB=-180V;IE=0 -10 μA -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-0.7A ; VCE=-10V fT Transition frequency IC=-0.7A ; VCE=-12V 60 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF 0.50 μs 1.00 μs 0.50 μs 60 240 Switching time ton Turn-on time ts Storage time tf Fall time IC=-1A ;IB1=-IB2=-0.1A VCC=-20V ,RL=20Ω 2 JMnic Product Specification 2SA1859 2SA1859A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1859 2SA1859A Silicon PNP Power Transistors 4