JMNIC 2SA1859

JMnic
Product Specification
2SA1859 2SA1859A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SC4883/4883A
APPLICATIONS
・For audio output driver and TV
velocity-modulation applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA1859
VCBO
Collector-base voltage
-150
Open base
2SA1859A
VEBO
Emitter-base voltage
V
-180
2SA1859
Collector-emitter voltage
UNIT
-150
Open emitter
2SA1859A
VCEO
VALUE
V
-180
Open collector
-6
V
IC
Collector current
-2
A
IB
Base current
-1
A
PC
Collector dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1859 2SA1859A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SA1859
ICBO
Collector-emitter saturation voltage
Collector cut-off
current
TYP.
MAX
UNIT
-150
IC=-10mA ; IB=0
V
-180
2SA1859A
VCEsat
MIN
IC=-0.7A;IB=-70mA
-1.0
V
2SA1859
VCB=-150V;IE=0
-10
μA
2SA1859A
VCB=-180V;IE=0
-10
μA
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-0.7A ; VCE=-10V
fT
Transition frequency
IC=-0.7A ; VCE=-12V
60
MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30
pF
0.50
μs
1.00
μs
0.50
μs
60
240
Switching time
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-1A ;IB1=-IB2=-0.1A
VCC=-20V ,RL=20Ω
2
JMnic
Product Specification
2SA1859 2SA1859A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA1859 2SA1859A
Silicon PNP Power Transistors
4