JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB941 VCBO Collector-base voltage -60 Open base 2SB941A VEBO Emitter-base voltage V -80 2SB941 Collector-emitter voltage UNIT -60 Open emitter 2SB941A VCEO VALUE V -80 Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SB941 MIN TYP. MAX UNIT -60 IC=-30mA ,IB=0 2SB941A V -80 Collector-emitter saturation voltage IC=-3A, IB=-0.375A -1.2 V VBE Base-emitter voltage IC=-3A ; VCE=-4V -1.8 V IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA ICEO Collector cut-off current -0.3 mA -0.2 mA ICES Collector cut-off current 2SB941 VCE=-30V; IB=0 2SB941A VCE=-60V; IB=0 2SB941 VCE=-60V; VBE=0 2SB941A VCE=-80V; VBE=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 70 hFE-2 DC current gain IC=-3A ; VCE=-4V 10 Transition frequency IC=0.5A; VCE=-10V,f=10MHz fT 250 30 MHz 0.5 μs 1.2 μs 0.3 μs Switching times ton Turn-on time tstg Storage time tf IC=-1A IB1=-0.1A ,IB2=0.1A Fall time hFE-1 Classifications Q P 70-150 120-250 2 JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 JMnic Product Specification 2SB941,2SB941A Silicon PNP Power Transistors 4