JMNIC 2SC2590

JMnic
Product Specification
2SC2590
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SA1110
・Excellent current IC characteristics of forward
current transfer ratio hFE vs. collector
・High transition frequency fT
・Optimum for the driver stage of a
40 W to 60 W output amplifier
APPLICATIONS
・For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
0.5
A
ICM
Collector current-Peak
1.0
A
PC
Collector power dissipation
1.2*
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Note) *: Without heat sink
TC=25℃
JMnic
Product Specification
2SC2590
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=100μA;IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=0.3A ;IB=30mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.3A ;IB=30mA
1.2
V
hFE-1
DC current gain
IC=150mA ; VCE=10V
90
hFE-2
DC current gain
IC=0.5A ; VCE=5V
65
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCB=10V,f=200MHz
‹
CONDITIONS
hFE-1 Classifications
Q
R
90-155
130-220
2
MIN
TYP.
MAX
UNIT
220
100
20
200
pF
MHz
JMnic
Product Specification
2SC2590
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SC2590
Silicon NPN Power Transistors
4