Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA794 VCBO Collector-base voltage -100 Open base 2SA794A VEBO Emitter-base voltage V -120 2SA794 Collector- emitter voltage UNIT -100 Open emitter 2SA794A VCEO VALUE V -120 Open collector -5 V -0.5 A -1 A 1.2* W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~+150 ℃ *Without heat sink TC=25℃ Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA794 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -100 IC=-100μA ;IB=0 2SA794A V(BR)EBO MIN V -120 Emitter-base breakdown voltage IE=-1μA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50mA -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-500mA ;IB=-50mA -0.85 -1.2 V hFE-1 DC current gain IC=-150mA ; VCE=-10V 90 hFE-2 DC current gain IC=-500mA ; VCE=-5V 50 COB Collector output capacitance IE=0 ; VCB=-10V;f=1MHz 20 pF Transition frequency VCB=-10V;IE=50mA;f=200MHz 120 MHz fT hFE-1 Classifications Q R 90-155 130-220 2 -5 V 220 Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3