ISC 2SC2590

Inchange Semiconductor
Product Specification
2SC2590
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SA1110
・Excellent current IC characteristics of forward
current transfer ratio hFE vs. collector
・High transition frequency fT
・Optimum for the driver stage of a
40 W to 60 W output amplifier
APPLICATIONS
・For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
体
导
半
固电
EM
S
E
NG
Absolute Maximun Ratings (Ta=25℃)
R
O
T
UC
D
N
O
IC
VCEO
A
H
C
IN
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
0.5
A
ICM
Collector current-Peak
1.0
A
PC
Collector power dissipation
1.2*
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
SYMBOL
VCBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
120
V
120
V
5
V
Note) *: Without heat sink
TC=25℃
Inchange Semiconductor
Product Specification
2SC2590
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=100μA;IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=0.3A ;IB=30mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.3A ;IB=30mA
1.2
V
hFE-1
DC current gain
IC=150mA ; VCE=10V
90
hFE-2
DC current gain
IC=0.5A ; VCE=5V
65
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
‹
体
导
半
固电
90-155
R
IC=50mA ; VCB=10V,f=200MHz
EM
S
E
NG
hFE-1 Classifications
Q
CONDITIONS
A
H
C
IN
130-220
2
MIN
TYP.
MAX
220
100
20
R
O
T
UC
D
N
O
IC
UNIT
200
pF
MHz
Inchange Semiconductor
Product Specification
2SC2590
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC2590
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC