Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF (2.5dB typ). 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -30 mA Collector dissipation PC 150 W Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector cutoff current IcBO VCB = -10V , IE = 0 Emitter cutoff current IEBO VEB = -4V , IC = 0 DC current Gain hFE VCE = -6V , IC = -1mA 60 fT VCE = -6V , IC = -1mA 150 Gain bandwidth product Typ Max Unit -0.1 ìA -0.1 ìA 270 230 MHz Reverse transfer capacitace Cre VCB = -6V , f = 1MHz 1.1 1.7 pF Base-collector time constant rbb,Cc VCE = -6V , IC = -1mA , f = 31.9MHz 11 20 ps Noise figure NF VCE = -6V , IC = -1mA , f = 100MHz 2.5 dB Voltage gain PG VCE = -6V , IC = -1mA , f = 100MHz 22 dB hFE Classification Marking hFE E3 60 120 E4 E5 90 180 135 180 www.kexin.com.cn 1