KEXIN 2SA1256

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1256
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Small NF (2.5dB typ).
0.55
High fT (230MHz typ), and small Cre (1.1pF typ).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-30
mA
Collector dissipation
PC
150
W
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector cutoff current
IcBO
VCB = -10V , IE = 0
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
DC current Gain
hFE
VCE = -6V , IC = -1mA
60
fT
VCE = -6V , IC = -1mA
150
Gain bandwidth product
Typ
Max
Unit
-0.1
ìA
-0.1
ìA
270
230
MHz
Reverse transfer capacitace
Cre
VCB = -6V , f = 1MHz
1.1
1.7
pF
Base-collector time constant
rbb,Cc
VCE = -6V , IC = -1mA , f = 31.9MHz
11
20
ps
Noise figure
NF
VCE = -6V , IC = -1mA , f = 100MHz
2.5
dB
Voltage gain
PG
VCE = -6V , IC = -1mA , f = 100MHz
22
dB
hFE Classification
Marking
hFE
E3
60
120
E4
E5
90 180
135 180
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