Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1688 Features Very small-sized package. High power gain. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -30 mA Collector dissipation PC 150 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -10V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -6V , IC = -1mA 60 fT VCE = -6V , IC = -1mA 150 Reverse transfer capacitance Cre VCB = -6V , f = 1MHz 1.1 1.7 pF Base-collector time constant bb'Cc VCE = -6V , IC = -1mA, f = 31.9MHz 11 20 ps Gain bandwidth product Testconditons Min Typ 270 230 MHz Voltage gain PG 22 dB Noise figure NF 2.5 dB VCE = -6V, IC = -1mA, f = 100MHz hFE Classification E Marking Rank 3 4 5 hFE 60 120 90 180 135 270 www.kexin.com.cn 1