KEXIN 2SA1688

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1688
Features
Very small-sized package.
High power gain.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-30
mA
Collector dissipation
PC
150
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = -10V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -6V , IC = -1mA
60
fT
VCE = -6V , IC = -1mA
150
Reverse transfer capacitance
Cre
VCB = -6V , f = 1MHz
1.1
1.7
pF
Base-collector time constant
bb'Cc
VCE = -6V , IC = -1mA, f = 31.9MHz
11
20
ps
Gain bandwidth product
Testconditons
Min
Typ
270
230
MHz
Voltage gain
PG
22
dB
Noise figure
NF
2.5
dB
VCE = -6V, IC = -1mA, f = 100MHz
hFE Classification
E
Marking
Rank
3
4
5
hFE
60 120
90 180
135 270
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