KEXIN 2SA1400-Z

Transistors
SMD Type
Silicon Transistor
2SA1400-Z
TO-252
Features
Unit: mm
2.30
+0.1
-0.1
+0.15
1.50 -0.15
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High speed:tr 1.0ìs
3 .8 0
High Voltage: VCEO=-400V
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-7
V
Collector Current (DC)
IC
-0.5
A
Collector Current (Pulse) *1
IC
-1
A
PT
2
W
Total power Dissipation (Ta=25
) *2
Junction Tmeperature
Tj
150
Storage Temperature
Tstg
-55 to 150
*1 pw 300ìs,Duty Cycle 10%
*2 When mounted on ceramic substrate of 7.5cm2X0.7mm
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB=-400V,IE=0
-100
ìA
Emitter Cutoff Current
IEBO
VEB=-5V,IC=0
-10
V
hFE
VCE=-5V,IC=-50mA
DC Current Gain*
30
200
Collector Saturation Voltage *
VCE(sat)
IC=-100mA,IB=-10mA
-1
V
Base Saturation Voltage *
VBE(sat)
IC=-100mA,IB=-10mA
-1.2
V
Turn-on Time
ton
IC=-100mA,RL=1.5KÙ
1
Storage Time
tstg
IB1=-IB2=-10mA,VCC=-150V
5
PW
1
Fall time
* PW
tf
50ìs,Duty Cycle 2%
ìs
350ìs,Duty Cycle 2%
hFE Classification
Marking
N
M
L
K
hFE
30 to 60
40 to 80
60 to 120
100 to 200
www.kexin.com.cn
1