Transistors SMD Type Silicon Transistor 2SA1400-Z TO-252 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High speed:tr 1.0ìs 3 .8 0 High Voltage: VCEO=-400V 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collector to Emitter Voltage VCEO -400 V Emitter to Base Voltage VEBO -7 V Collector Current (DC) IC -0.5 A Collector Current (Pulse) *1 IC -1 A PT 2 W Total power Dissipation (Ta=25 ) *2 Junction Tmeperature Tj 150 Storage Temperature Tstg -55 to 150 *1 pw 300ìs,Duty Cycle 10% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cutoff Current ICBO VCB=-400V,IE=0 -100 ìA Emitter Cutoff Current IEBO VEB=-5V,IC=0 -10 V hFE VCE=-5V,IC=-50mA DC Current Gain* 30 200 Collector Saturation Voltage * VCE(sat) IC=-100mA,IB=-10mA -1 V Base Saturation Voltage * VBE(sat) IC=-100mA,IB=-10mA -1.2 V Turn-on Time ton IC=-100mA,RL=1.5KÙ 1 Storage Time tstg IB1=-IB2=-10mA,VCC=-150V 5 PW 1 Fall time * PW tf 50ìs,Duty Cycle 2% ìs 350ìs,Duty Cycle 2% hFE Classification Marking N M L K hFE 30 to 60 40 to 80 60 to 120 100 to 200 www.kexin.com.cn 1