Transistors IC SMD Type PNP Silicon Epitaxia 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High fT: fT=400MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V IC -500 mA PT 200 mW Maximum Junction temperature Tj 150 Maximum Storage temperature Tstg -55 to +150 Collector current Maximum Total power dissipation at 25 ambient temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -40V, IE=0 -100 nA Emitter cutoff current IEBO VEB = -4V, IC=0 -100 nA DC current gain * hFE VCE = -2V , IC = -150mA 75 VCE = -2V , IC = -500mA 20 Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA Gain bandwidth product fT Output capacitance VCE = -10V , IE = 20mA Cob VCB = -10V , IE = 0 , f = 1.0MHz 140 300 50 -0.45 -0.75 -1 150 -1.3 400 5 V V MHz 8 pF Turn-on time ton VCC = -30V , 35 ns Storage time tstg IC = 150mA , 225 ns Turn-off time toff IB1 = -IB2 = 15mA 255 ns *. PW 350ìs,duty cycle 2% hFE Classification Marking Y12 hFE 75 150 Y13 100 200 Y14 150 300 www.kexin.com.cn 1