Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1440 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Peak collector current ICP -3 A Collector current IC -2 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -50 V Collector-emitter voltage VCEO IC = -1 mA, IB = 0 -50 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 Forward current transfer ratio hFE VCE = -2 V, IC = -200 mA -5 V 120 340 Collector-emitter saturation voltage VCE(sat) IC = -1 A, IB = - 50 mA -0.2 -0.3 Base-emitter saturation voltage VBE(sat) IC = -1 A, IB = - 50 mA -0.85 -1.2 Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA, f = 200 MHz 80 VCB = -10 V, IE = 0, f = 1 MHz 45 V MHz 60 pF hFE Classification 1I Marking Rank R S hFE 120 240 170 340 www.kexin.com.cn 1