Transistors SMD Type High-voltage Switching Transistor 2SA1875 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Adoption of FBET process. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Large current capacitance. +0.15 0.50 -0.15 200V(min). +0.2 9.70 -0.2 High breakdown voltage : VCEO 3 .8 0 High fT : fT=400MHz(typ). 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-to-Base Voltage VCBO -200 V Collector-to-Emitter Voltage VCEO -200 V Emitter-to-Base Voltage VEBO -3 V Collector Current IC -300 mA Collector Current (Pulse) ICP -600 mA Base Current IB -30 mA 0.8 W 12 W Collector Dissipation PC Tc=25 Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 www.kexin.com.cn 1 Transistors SMD Type 2SA1875 Electrical Characteristics Ta = 25 Parameter unless otherwise stated Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Min Typ VCB=-150V, IE=0 VEB=-2V, IC=0 VCE=-10V, IC=-50mA 60 VCE=-10V, IC=-250mA 20 Max Unit -0.1 ìA -1.0 ìA 320 VCE=-10V, IC=-100mA 400 MHz Output Capacitance Cob VCB=-30V, f=1MHz 5.0 pF Reverse Transfer Capacitance Cre VCB=-30V, f=1MHz 4.2 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=-50mA, IB=-5mA -1.0 V Base-to-Emitter Saturation Voltage VBE(sat) IC=-50mA, IB=-5mA -1 V Gain-Bandwidth Product fT Collector-to-Base Breakdown Voltage V(BR)CBO IC=-10ìA, IE=0 -200 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, RBE= -200 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=-100ìA, IC=0 -3 V hFE Classification 2 Testconditons Rank D E F hFE 60 to 120 100 to 200 160 to 320 www.kexin.com.cn