KEXIN 2SA1947

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1947
Features
High fT: fT=100MHz typ
Excellent linearity of DC forward current gain
High collector current Icm=-1.5A
Small package for mounting
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
Unit
VCBO
-30
V
Emitter-base voltage
VEBO
-4
V
Collector-emitter voltage
VCEO
-25
V
ICM
-1.5
A
Peak collector current
Collector current
IC
-1
A
Collector dissipation (Ta=25 )
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Colllector-base breakdown voltage
V(BR)CBO IC=-10ìA,IE=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10ìA,IC=0
-4
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-100ìA,RBE=
-25
V
Collector cutoff current
ICBO
VCB=-25V,IE=0
-1
ìA
Emitter cutoff current
IEBO
VEB=-2V,IC=0
-1
ìA
hFE
VCE=-1V,IC=-500mA
DC current gain
55
300
VCE(sat) IC=-500mA,IB=-25mA
Collector-emitter saturation voltage
Gain bandwidth product
fT
VCE=-6V,IE=-10mA
-0.5
100
V
MHz
hFE Classification
Marking
ABC
ABD
ABE
hFE
55 110
90 180
150 300
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