Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1623 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’ s further miniaturization. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Collector current (pulse) ICP 4 A PC 0.5 W W Collector dissipation PC * 1.3 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board(250mm2X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SD1623 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 50 V, IE=0 100 nA Emitter cutoff current IEBO VEB = 4 V, IC=0 100 nA DC current gain hFE VCE = 2 V , IC = 100 mA fT VCE = 10 V , IC = 50 mA 150 MHz Cob VCB = 10 V , f = 1.0MHz 12 pF Gain bandwidth product Output capacitance Testconditons Typ 100 560 Collector-emitter saturation voltage VCE(sat) IC = 1 A , IB = 50 mA 0.15 0.4 V Base-emitter saturation voltage VBE(sat) IC = 1 A , IB = 50 mA 0.9 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V V Turn-on timie ton 60 ns Storage time tstg 550 ns Turn-off time tf 30 ns hFE Classification DF Marking 2 Min Rank R S T U hFE 100 200 140 280 200 400 280 560 www.kexin.com.cn