KEXIN 2SB1396

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistor
2SB1396
Features
Adoption of FBET,MBIT processes
Large current capacity
Low collector to emitter saturation voltage
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-15
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
IC
-3
A
Collector current
Collector current (Pulse)
ICP
-5
A
Collector dissipation *
PC *
1.3
W
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature
2
* Mounted on ceramic PCB (250mm X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -12V, IE=0
-100
ìA
Emitter cutoff current
IEBO
VEB = -6V, IC=0
-100
ìA
DC current Gain
hFE
Gain bandwidth product
Output capacitance
VCE =-2V , IC = -0.5A
140
VCE =-2V , IC = -3A
70
560
fT
VCE =-2V , IC = -0.3A
400
GHz
Cob
VCE = -10V , f=1MHz
26
pF
C-E Saturation Voltage
VCE(sat)
IC=-1.5A,IB=-30mA
-220
-400
mV
B-E Saturation Voltage
VBE(sat)
IC=-1.5A,IB=-30mA
-0.9
-1.2
V
C-B Breakdown Voltage
V(BR)CBO
IC=-10ìA,IE=0
-15
V
C-E Breakdown Voltage
V(BR)CEO
IC=-1mA,RBE=
-10
V
E-B Breakdown Voltage
V(BR)EBO
IE=-10ìA,IC=0
-7
V
hFE Classification
BO
Marking
Rank
S
T
U
hFE
140 280
200 400
280 560
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