Transistors 2SC5654 Silicon NPN epitaxial planer type (0.425) Unit: mm For DC-DC converter Complementary to 2SA2028 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C 10˚ Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 3 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector S Mini Type Package (3-pin) 0 to 0.1 Parameter Marking Symbol: 2S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = 10 µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency 5 V hFE VCE = 2 V, IC = 100 mA VCE(sat) IC = 200 mA, IB = 10 mA 60 100 mV VCB = 10 V, IE = 0, f = 1 MHz 12 30 pF VCB = 10 V, IE = −10 mA, f = 200 MHz 180 Cob fT 160 560 MHz 1