KEXIN 2SC2462

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2462
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
Low frequency amplifier.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = 10ìA , IE = 0
50
V
Collector-emitter breakdown voltage
VCEO
IC = 1mA , RBE =
40
V
Emitter-base breakdown voltage
VEBO
IE = 10ìA , IC = 0
5
V
Base-emitter voltage
VBE
VCE = 12V , IC = 2mA
0.75
Collector cutoff current
ICBO
VCB = 30V, IE=0
0.5
A
Emitter cutoff current
IEBO
VEB = 2V, IC=0
0.5
A
hFE
VCE = 12V , IC = 2mA
DC current gain
VCE(sat) IC = 10mA , IB = 1mA
Collector-emitter saturation voltage
100
V
500
0.2
V
hFE Classification
Marking
LB
Rank
hFE
LC
B
100
LD
C
200
160
D
320
250
500
www.kexin.com.cn
1
Transistors
IC
SMD Type
2SC2462
Typlcal Characteristics
Fig.1 Maximum Collector Dissipation Curve
2
www.kexin.com.cn