Transistors IC SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 0.55 Low-voltage, low-current, low-noise and high-gain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz +0.05 0.1-0.01 +0.1 0.97-0.1 Ideal for battery drive of pagers, compact radio equipment cordless phones, etc. 0-0.1 Mini mold package, ideal for hybrid ICs. +0.1 0.38-0.1 Gold electrode gives high reliability. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current IC 5 mA Total power dissipation PT 50 mW Junction temperature Storage temperature range Tj 150 Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector Cut-off Current ICBO VCB = 5 V, IE = 0 Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 DC Current Gain hFE VCE = 1 V, IC = 250 PA, pulse Gain Bandwidth Product fT Min 50 VCE = 1 V, IC = 1 mA 2 Typ 100 Max Unit 0.1 ìA 0.1 ìA 250 4 Insertion Power Gain |S21e| VCE = 1 V, IC = 1 mA, f = 1 GHz 6.5 dB Maximum Available Gain MAG VCE = 1 V, IC = 1 mA, f = 1 GHz 12.5 dB NF VCE = 1 V, IC = 250 ìA, f = 1.0 GHz 3.0 Associated Power Gain GA VCE = 1 V, IC = 250 ìA, f = 1.0 GHz 3.5 Collector Capacitance C VCB = 1 V, IE = 0, f = 1.0 MHz 0.4 Noise Figure 4.0 GHz 4.5 dB dB 0.6 pF Marking Marking R62 www.kexin.com.cn 1