Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V). High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 500 mA Collector current (pulse) ICP 800 mA Base current IB 100 mA Collector dissipation PC 150 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SC4694 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current IcBO VCB = 40V , IE = 0 Emitter cutoff current IEBO VEB = 20V , IC = 0 DC current Gain hFE VCE = 5V , IC = 10mA fT VCE = 10V , IC = 10mA Cob VCB = 10V , f = 1MHz Gain bandwidth product Common base output capacitance Min Typ 300 Max Unit 0.1 ìA 0.1 ìA 1200 250 MHz 3.6 pF Collector-to-emitter saturation voltage VCE(sat) IC = 100mA , IB = 2mA 0.12 0.5 V Base-to-emitter saturation voltage VBE(sat) IC = 100mA , IB = 2mA 0.85 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 50 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = 20 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 25 V Turn-on time ton 135 ns Storage time tstg 450 ns tf 100 ns Fall time Marking Marking 2 Testconditons WT www.kexin.com.cn