Transistors SMD Type Silicon PNP Epitaxial Planar 2SB1572 Features Low VCE(sat): VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -6 V Collector Current (DC) IC(DC) -3 A Ic(Pulse) -5 A IB(DC) -0.2 A Base Current (pulse) * IB(Pulse) -0.4 A Total Power Dissipation PT 2 W Junction Temperature Tj 150 Storage temperature Tstg -55 to +150 Collector Current (pulse) * Base Current (DC) * PW 10 ms, Duty Cycle 50% www.kexin.com.cn 1 Transistors SMD Type 2SB1572 Electrical Characteristics Ta = 25 Parameter Symbol Collector Cut-off Current Emitter Cut-off Current DC Current Gain * ICBO VCB = -80 V, IE = 0 Min Typ Max Unit -100 nA -100 nA IEBO VEB = -6.0 V, IC = 0 hFE1 VCE = -2.0 V, IC = -0.1 A 80 hFE2 VCE = -2.0 V, IC = -1.0 A 100 200 400 VBE VCE = -2.0 V, IC = -0.1 A -0.63 -0.685 -0.73 V Collector Saturation Voltage * VCE(sat)1 IC = -2.0 A, IB = -0.1 A -0.2 -0.4 V Collector Saturation Voltage * VCE(sat)2 IC = -3.0 A, IB = -0.15 A -0.3 -0.6 V Base Saturation Voltage * VBE(sat) IC = -2.0 A, IB = -0.1 A -0.89 -1.2 VCE = -10 V, IE = 0.3 A 160 MHz VCB = -10 V, IE = 0, f = 1.0 MHz 45 pF 155 ns 510 ns 35 ns Base to Emitter Voltage * Gain Bandwidth Product fT Output Capacitance Cob Turn-on Time ton Storage Time tstg Fall Time * Pulsed: PW tf 350 ìs, Duty Cycle 2%. hFE Classification 2 Testconditons Marking HX HY HZ hFE 100 200 160 320 200 400 www.kexin.com.cn IC = -1.0 A, VCC = -10 V, RL = 5.0 ? , IB1 = -IB2 = -0.1 A, V