KEXIN 2SB1572

Transistors
SMD Type
Silicon PNP Epitaxial Planar
2SB1572
Features
Low VCE(sat): VCE(sat)
-0.4 V
Complementary to 2SD2403
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-80
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC(DC)
-3
A
Ic(Pulse)
-5
A
IB(DC)
-0.2
A
Base Current (pulse) *
IB(Pulse)
-0.4
A
Total Power Dissipation
PT
2
W
Junction Temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector Current (pulse) *
Base Current (DC)
* PW
10 ms, Duty Cycle
50%
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1
Transistors
SMD Type
2SB1572
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
ICBO
VCB = -80 V, IE = 0
Min
Typ
Max
Unit
-100
nA
-100
nA
IEBO
VEB = -6.0 V, IC = 0
hFE1
VCE = -2.0 V, IC = -0.1 A
80
hFE2
VCE = -2.0 V, IC = -1.0 A
100
200
400
VBE
VCE = -2.0 V, IC = -0.1 A
-0.63
-0.685
-0.73
V
Collector Saturation Voltage *
VCE(sat)1 IC = -2.0 A, IB = -0.1 A
-0.2
-0.4
V
Collector Saturation Voltage *
VCE(sat)2 IC = -3.0 A, IB = -0.15 A
-0.3
-0.6
V
Base Saturation Voltage *
VBE(sat) IC = -2.0 A, IB = -0.1 A
-0.89
-1.2
VCE = -10 V, IE = 0.3 A
160
MHz
VCB = -10 V, IE = 0, f = 1.0 MHz
45
pF
155
ns
510
ns
35
ns
Base to Emitter Voltage *
Gain Bandwidth Product
fT
Output Capacitance
Cob
Turn-on Time
ton
Storage Time
tstg
Fall Time
* Pulsed: PW
tf
350 ìs, Duty Cycle
2%.
hFE Classification
2
Testconditons
Marking
HX
HY
HZ
hFE
100 200
160 320
200 400
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IC = -1.0 A, VCC = -10 V,
RL = 5.0 ? , IB1 = -IB2 = -0.1 A,
V