Transistors IC SMD Type Silicon NPN epitaxial planar type 2SD965 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Collector power dissipation PC 0.75 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 7 V Collector-base cutoff current ICBO VCB = 10 V, IE = 0 0.1 A Collector-emitter cutoff current ICEO VCE = 10 V, IB = 0 1 A Emitter-base cutoff current IEBO VEB = 7V, IC = 0 0.1 A DC current gain hFE Collector-emitter saturation voltage VCE(sat) Collector output capacitance Cob Transition frequency fT VCE = 2 V, IC = 0.5 A 230 VCE = 2 V, IC = 2A 150 600 IC = 3A, IB = 0.1 A 1 VCB = 20 V, IE = 0, f = 1 MHz VCB = 6 V, IE = -50 mA, f = 200 MHz 50 150 V pF MHz hFE Classification Marking hFE Q 230 R 380 340 600 www.kexin.com.cn 1